发明名称 Semiconductor integrated circuit device and method of manufacturing the same
摘要 A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 mum, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin.
申请公布号 US7397114(B2) 申请公布日期 2008.07.08
申请号 US20060362732 申请日期 2006.02.28
申请人 RENESAS TECHNOLOGY CORP. 发明人 MIYAKI YOSHINORI;SUZUKI HIROMICHI;KANEDA TSUYOSHI
分类号 H01L23/495;H01L21/607 主分类号 H01L23/495
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