Method of forming a semiconductor thin film

摘要

A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openings with a semiconductor seed layer; forming an amorphous layer on the seed layer and the insulation layer; transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level; and forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.