| 摘要 |
<p>A method for fabricating a semiconductor integrated circuit apparatus and a semiconductor integrated circuit apparatus fabricated by the same are provided to improve the reliability by preventing a silicide layer from being penetrated in a space oxide layer. A semiconductor integrated circuit apparatus includes a semiconductor substrate(100), a gate insulation layer(210), a gate electrode(220), a spacer oxide layer(230), a spacer(240), source/drain regions(250), and a silicide layer(260). The gate insulation layer is formed on the semiconductor substrate. The spacer oxide layer is extended to a partial region of the semiconductor substrate along a sidewall of the gate electrode. The spacer is formed in a side surface of the spacer oxide layer to cover the spacer oxide layer. The source/drain regions are aligned in the gate electrode in the semiconductor substrate. The silicide layer is formed in an upper portion of the gate electrode, and upper portions of the source/drain regions.</p> |
