发明名称 ETCHING APPARATUS USING NEUTRAL BEAM
摘要 An etching apparatus using neutral beam is provided to convert an ion beam into a neutral beam while having high neutralizing efficiency. An etching apparatus using neutral beam includes an ion extracting unit(12,18), an electron emission unit(13,13a,19), and a chuck(15). The ion extracting unit extracts an ion beam from plasma in a chamber(10). The ion extracting unit includes a plurality of grids and a first direct current power source part. The electron emission unit converts the extracted ion beam into a neutral beam by colliding electrons with the extracted ion beam. The electron emission unit includes an electron emission electrode, an electron emission layer, and a second direct current power source part. The chuck fixes and supports an etch target etched by the neutral beam.
申请公布号 KR20080063988(A) 申请公布日期 2008.07.08
申请号 KR20070000674 申请日期 2007.01.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, YUN KWANG;LEE, JIN SEOK;LEE, YUNG HEE;KIM, GI TAE
分类号 H01L21/3065 主分类号 H01L21/3065
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