发明名称 |
ETCHING APPARATUS USING NEUTRAL BEAM |
摘要 |
An etching apparatus using neutral beam is provided to convert an ion beam into a neutral beam while having high neutralizing efficiency. An etching apparatus using neutral beam includes an ion extracting unit(12,18), an electron emission unit(13,13a,19), and a chuck(15). The ion extracting unit extracts an ion beam from plasma in a chamber(10). The ion extracting unit includes a plurality of grids and a first direct current power source part. The electron emission unit converts the extracted ion beam into a neutral beam by colliding electrons with the extracted ion beam. The electron emission unit includes an electron emission electrode, an electron emission layer, and a second direct current power source part. The chuck fixes and supports an etch target etched by the neutral beam.
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申请公布号 |
KR20080063988(A) |
申请公布日期 |
2008.07.08 |
申请号 |
KR20070000674 |
申请日期 |
2007.01.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, YUN KWANG;LEE, JIN SEOK;LEE, YUNG HEE;KIM, GI TAE |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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