Single crystal semiconductor manufacturing apparatus and method

摘要

A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference DeltaTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal ( 14 ) and the size (diameter D) of the seed crystal ( 14 ). When the seed crystal ( 14 ) comes into contact with the melt ( 5 ), electric power supplied to a bottom heater ( 19 ) is fixed, and a magnetic field produced by a magnet ( 20 ) is applied to the melt ( 5 ). Electric power supplied to a main heater ( 9 ) is controlled so that the temperature at the surface of the melt ( 5 ) which the seed crystal ( 14 ) comes into contact with may be a target value. After the seed crystal ( 14 ) comes into contact with the melt ( 5 ), single crystal silicon is pulled up without performing a necking process.