| 摘要 |
A universal leakage monitoring system (ULMS) to measure a plurality of leakage macros during the development of a manufacturing process or a normal operation period. The ULMS characterizes the leakage of both n-type and p-type CMOS devices on the gate dielectric leakage, the sub-threshold leakage, and the reverse biased junction leakage, and the like. Testing is performed sequentially from the first test macro up to the last test macro using an on-chip algorithm. When the last test macro is tested, it scans the leakage data out.
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