Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals

摘要

Methods of fabricating a semiconductor device including a dual-hybrid liner in which an underlying silicide layer is protected from photoresist stripping chemicals by using a hard mask as a pattern during etching, rather than using a photoresist. The hard mask prevents exposure of a silicide layer to photoresist stripping chemicals and provides very good lateral dimension control such that the two nitride liners are well aligned.