发明名称 |
Low temperature epitaxial growth of silicon-containing films using UV radiation |
摘要 |
A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry. |
申请公布号 |
US7396743(B2) |
申请公布日期 |
2008.07.08 |
申请号 |
US20040866471 |
申请日期 |
2004.06.10 |
申请人 |
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发明人 |
SINGH KAUSHAL K.;CARLSON DAVID;HEMKAR MANISH;KUPPURAO SATHEESH;THAKUR RANDHIR |
分类号 |
H01L21/20;C30B1/00;G01R31/26;H01L21/205;H01L21/36;H01L21/66 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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