发明名称 PATTERN FORMING PROCESS FOR SEMICONDUCTOR DEVICE
摘要 <p>A method for forming patterns of semiconductor devices is provided to form effectively micro patterns by enhancing boundary characteristics between RELACS materials and photosensitive film patterns. In a method for forming patterns of semiconductor devices to coat water-soluble materials on photosensitive film patterns, a surface of the photosensitive film patterns(115) is rinsed by using a composition(120) having polymer and water before coating the water-soluble materials on the photosensitive film patterns. At this time, the photosensitive film patterns are formed on a substrate(113) through a lithography process. The surface of the photosensitive film patterns is rinsed using the composition having the polymer and water. After coating RELACS(Resolution Enhancement Lithography Assisted by Chemical Shrink) materials(117) on the rinsed photosensitive film patterns, baking is performed. Then the baked resultant is washed.</p>
申请公布号 KR20080063922(A) 申请公布日期 2008.07.08
申请号 KR20070000529 申请日期 2007.01.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SUNG KOO;KIM, TAE HUAN
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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