发明名称 |
Methods of improving drive currents by employing strain inducing STI liners |
摘要 |
A method forms a semiconductor device comprising isolation structures that selectively induce strain into active regions of NMOS and PMOS devices. Form a hard mask layer over a semiconductor body. A resist layer is formed on the hard mask layer that exposes and defines isolation regions. The hard mask layer is patterned and trench regions are formed using the hard mask layer as a mask. An oxide trench liner that induces compressive strain into active regions of the PMOS region is formed within trench regions of the PMOS region. A nitride trench liner that induces tensile strain into active regions of the NMOS region is formed within the NMOS trench regions.
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申请公布号 |
US7396728(B2) |
申请公布日期 |
2008.07.08 |
申请号 |
US20050170501 |
申请日期 |
2005.06.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
VARGHESE AJITH;MEHTA NARENDRA SINGH;HOLT JONATHAN MCAULAY |
分类号 |
H01L21/336;H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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