发明名称 Semiconductor device and manufacturing method of the same
摘要 Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.
申请公布号 US7396715(B2) 申请公布日期 2008.07.08
申请号 US20050189816 申请日期 2005.07.27
申请人 FUJITSU LIMITED 发明人 IKEDA KAZUTO
分类号 H01L29/45 主分类号 H01L29/45
代理机构 代理人
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