| 摘要 |
<p>A method for forming a storage node contact of a semiconductor device is provided to perform a hard mask etching process and an SNC(Storage Node Contact) etching process in-situ in a dielectric etching chamber by employing a nitride based hard mask instead of a poly silicon layer. A first dielectric(33) is formed on an upper portion of a structure where a landing plug contact(34) is formed. A bitline pattern, where a bitline conductive layer and a bit line hard mask(37) are laminated in turn, is formed on a surface of the first dielectric. A second dielectric(35) is formed on the whole surface until a gap of the bitline pattern is filled. The second dielectric is planarized until an upper portion of the bit line pattern is exposed. A hard mask is deposited on an upper portion of the second dielectric by using a nitride based material. The hard mask is etched to form a hard mask pattern. The second dielectric is partially etched in the same chamber with the hard mask pattern formation process in-situ to form a first opening unit(41) by using the hard mask pattern as an etching barrier layer. A width of the first opening unit is expanded in the chamber. A capping layer(42) is formed to change an upper profile of the bitline pattern exposed by the first opening unit into a rectangle profile. A spacer(32) is formed on the capping layer. A spacer etching is performed on the spacer until the surface of the landing plug contact is exposed to form a second opening unit(44). A storage node contact is formed to be gap-filled in a storage node contact hole comprised of the first and second opening units.</p> |
