| 发明名称 |
METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION |
| 摘要 |
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film. |
| 申请公布号 |
KR20080063766(A) |
申请公布日期 |
2008.07.07 |
| 申请号 |
KR20087008498 |
申请日期 |
2006.09.08 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
IZA MICHAEL;BAKER TROY J.;HASKELL BENJAMIN A.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L21/20;H01L21/44;H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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