发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus is provided with a beam-like spacer (7) arranged on an upper opening of a chamber (3) which faces a substrate (2). The beam-like spacer (7) is provided with an annular outer circumference portion (7a) supported by the chamber (3) on its lower plane (7d), a center portion (7b) positioned at the center of a region surrounded by the outer circumference portion (7a) in plane view, and a plurality of beam portions (7c) radially extending from the center portion (7b) to the outer circumference portion (7a). The entire dielectric plate (8) is uniformly supported by the beam-like spacer (7). The dielectric plate (8) is thinned, while ensuring mechanical strength for holding atmospheric pressure when inside the chamber (3) is depressurized.
申请公布号 KR20080063818(A) 申请公布日期 2008.07.07
申请号 KR20087010672 申请日期 2006.11.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIROSHIMA MITSURU;ASAKURA HIROMI;WATANABE SYOUZOU;OKUNE MITSUHIRO;SUZUKI HIROYUKI;HOUCHIN RYUZOU
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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