发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
A plasma processing apparatus is provided with a beam-like spacer (7) arranged on an upper opening of a chamber (3) which faces a substrate (2). The beam-like spacer (7) is provided with an annular outer circumference portion (7a) supported by the chamber (3) on its lower plane (7d), a center portion (7b) positioned at the center of a region surrounded by the outer circumference portion (7a) in plane view, and a plurality of beam portions (7c) radially extending from the center portion (7b) to the outer circumference portion (7a). The entire dielectric plate (8) is uniformly supported by the beam-like spacer (7). The dielectric plate (8) is thinned, while ensuring mechanical strength for holding atmospheric pressure when inside the chamber (3) is depressurized. |
申请公布号 |
KR20080063818(A) |
申请公布日期 |
2008.07.07 |
申请号 |
KR20087010672 |
申请日期 |
2006.11.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIROSHIMA MITSURU;ASAKURA HIROMI;WATANABE SYOUZOU;OKUNE MITSUHIRO;SUZUKI HIROYUKI;HOUCHIN RYUZOU |
分类号 |
H01L21/3065;H01L21/205 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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