OPERATION METHOD OF SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR MEMORY DEVICE AND PORTABLE MEDIA SYSTEM COMPRISING THE SAME

摘要

An operation method of a semiconductor memory device, a semiconductor memory device and a portable media system comprising the same are provided to minimize a leakage current generated in entering a deep power down mode. A semiconductor memory device includes a first internal circuit initialized by a first initialization signal(VCCHB_IVC) based on an internal power supply voltage(IVC). When the semiconductor memory device is powered up, the first initialization signal is generated. When the semiconductor memory device enters a deep power down mode, the first initialization signal is not generated. When the semiconductor memory device escapes from the deep power down mode, the first initialization signal is generated. A second internal circuit is initialized by a second initialization signal(VCCHB_EVC) based on an external power supply voltage(EVC). When the semiconductor memory device is powered up, the second initialization signal is generated.