A METHOD FOR DETECTING A DEFECT OF SEMICONDUCTOR DEVICE

摘要

A method for detecting defects of semiconductor devices is provided to obtain precisely detection results by utilizing a bright field optic inspection device while thickening an upper portion of bridges. Wafers(100) including plural storage nodes(102) are provided. Dielectric materials(106) are formed on an upper portion of the wafers having the storage nodes. The wafers are mounted in a field optic inspection device. Laser beam is radiated to the wafers. Bridges(104) between the storage nodes are detected by using reflected laser beams. An upper portion of the bridges generated between the storage nodes due to the dielectric materials is thickened. The bridges which are thickened by the dielectric materials are detected through a SEM(Scanning Electron Microscopy).