NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve the resistance to erroneous writing (disturb) of a split gate MONOS memory cell and to increase the operating speed of the memory cell. SOLUTION: In the non-volatile semiconductor memory device, a charge accumulation layer is eliminated from element isolation regions and from an insulation region between a memory transistor and a select transistor to prevent electric charges from being injected and accumulated in these regions. On the element isolation regions, a gate electrode of the memory transistor is put together at a higher position from the surface of a silicon substrate 000 than a gate electrode of the select transistor to reduce a capacity between the memory transistor and the select transistor. COPYRIGHT: (C)2008,JPO&INPIT