发明名称 ETCHED-FACET RIDGE LASERS WITH ETCH-STOP
摘要 <p>A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.</p>
申请公布号 WO2008079120(A1) 申请公布日期 2008.07.03
申请号 WO2006US49182 申请日期 2006.12.26
申请人 BINOPTICS CORPORATION 发明人 BEHFAR, ALEX A.;STAGARESCU, CRISTIAN, B.;SCHREMER, ALFRED T
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利