SHIELDED GATE TRENCH(SGT) MOSFET CELLS IMPLEMENTED WITH A SCHOTTKY SOURCE CONTACT
摘要
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
申请公布号
WO2007106422(A3)
申请公布日期
2008.07.03
申请号
WO2007US06165
申请日期
2007.03.10
申请人
ALPHA & OMEGA SEMICONDUCTOR, LTD.;BHALLA, ANUP;LUI, SIK, K.