RF-MOS-TRANSISTOR

摘要

A quasi-mesh gate structure (80) for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The connection structure uses a conductive plug (82) to connect a source area and a body area of the device with a backside (96). The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to long feeding gate paths used in prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize polysilicon gates or silicide gates (86). This results in a simplification of the fabrication process and/or improved performance at high frequencies.