THIN FILM TRANSISTOR, FABRICATING FOR THE SAME AND ORGANIC LIGHT EMITTING DIODE DEVICE DISPLAY COMPRISING THE SAME

摘要

A thin film transistor, a manufacturing method thereof, and an organic light emitting diode display device including the same are provided to improve good leakage current and electrical characteristics by removing a crystallization inducing metal remaining in a semiconductor layer. A first semiconductor layer(190) is formed on a substrate(100), and a second semiconductor layer(200) is formed to open a predetermined region of the first semiconductor layer. A source electrode(210a) and a drain electrode(210b) are formed on the second semiconductor layer(200) to connect the second semiconductor layer with the first semiconductor layer. A gate insulating layer(220) is formed on the substrate comprising the source/drain electrodes. A gate electrode(230) is formed on the gate insulating layer, and is positioned to correspond to the opened region of the first semiconductor layer.