| 摘要 |
<p>A method of manufacturing a flash memory cell of a stacked gate structure is provided to compensate the damaged during an implantation manufacturing process by using a sidewall spacer reinforced by an oxide layer. Two kinds of gate stacks having different line width are formed on a semiconductor substrate(100). The gate stack is etched to form a gate poly, and then an implant process is performed to form an LDD(Lightly Doped Drain). The substrate is subjected to an LDD annealing process to form an oxide layer(118) having a certain thickness on the entire surface of the gate poly. The oxide layer formed on the sidewall of the gate poly is etched to form a sidewall spacer which is reinforced by the oxide layer.</p> |
