| 摘要 |
<p>A nonvolatile memory device and a method of manufacturing the same are provided to increase a distance between floating gates by forming a narrow lower part of the floating gate using a spacer. An active area and an isolation area are defined in a semiconductor substrate. A gate insulating layer(104) is formed in the active area, and an isolation layer(108) is formed in the isolation area. A first conductive layer for floating gate(110) is formed above the gate insulating layer between isolation layers, and has a narrower width than the distance of the isolation layers. A second conductive layer for floating gate(114) is formed above the first conductive layer and has a wider width than the first conductive layer. A dielectric layer and a conductive layer for control gate are formed above the second conductive layer and the isolation layer.</p> |
