| 摘要 |
<p>A method of manufacturing a non-volatile memory device is provided to improve the breakdown voltage of a dielectric layer by forming an oxide layer to be used as a lower part layer out of a layer, which is damaged by plasma, through a decompression radical oxidation process. A semiconductor substrate(200) comprises a first conductive layer(204) and an isolation layer(210) which has lower height than the first conductive layer. A groove is formed at the center portion of the isolation layer. An oxide layer(216a) is formed on the surface of the first conductive layer by performing a radical oxidation process. A first insulating layer, a second insulating layer and a second conductive layer are formed on the oxide layer.</p> |
