| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an operating method for operating stably a semiconductor nonvolatile memory device. <P>SOLUTION: When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without considering any variations with time. Also, writing or writing/erasure is conducted by applying pulse voltage or multi-step voltage to a gate section a plurality of times. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
