| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an epitaxial wafer which is free from epitaxial defects and excellent in IG (intrinsic gettering) effect and in which the in-plane uniformity of the density of oxygen deposits is good. SOLUTION: A silicon single crystal having such a property that the oxidation-induced stacking faults generated during high temperature oxidation treatment is≤1×10<SP>2</SP>/cm<SP>2</SP>is obtained by cooling a silicon single crystal at a cooling speed of≥3.0°C/min within a temperature range of 1,100-900°C after pulling, in a process for pulling and growing the silicon single crystal. After cutting wafers out of the single crystal, each wafer is subjected to a heat treatment at a temperature of≥700 and <900°C for 30 min to 4 h, and is then mirror polished. Thereafter, an epitaxial layer is grown on the main surface of the wafer. COPYRIGHT: (C)2008,JPO&INPIT
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