| 摘要 |
According to an example embodiment, a semiconductor device includes a lower electrode ( 316 ) disposed on an oxide layer ( 302 ), an upper electrode ( 320 ) disposed on the lower electrode, a dielectric pattern ( 322 ) disposed on the oxide layer and surrounding the upper electrode, the upper electrode protruding above an upper surface of the dielectric pattern, and a contact pattern ( 328 ) that is contiguous with the upper electrode and the dielectric pattern.
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