| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
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| 申请公布号 |
US2008160750(A1) |
申请公布日期 |
2008.07.03 |
| 申请号 |
US20070953127 |
申请日期 |
2007.12.10 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TAKEWAKI TOSHIYUKI;IGUCHI MANABU;OSHIDA DAISUKE;TOYOSHIMA HIRONORI;HIROI MASAYUKI;ONUMA TAKUJI;NANBA HIROAKI;HONMA ICHIRO;HASEGAWA MIEKO;TSUCHIYA YASUAKI;TAIJI TOSHIJI;KUNUGI TAKAHARA |
| 分类号 |
H01L21/302;H01L21/44 |
主分类号 |
H01L21/302 |
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