Semiconductor component, has isolation area doped for p-conductivity type and exhibiting factor of two higher dopant concentration than semiconductor material of p-conductivity type

摘要

The component has a photodiode array, in which sensor areas (9) are arranged in a semiconductor material at an upper side of a semiconductor body. The sensor areas are doped for a n-conductivity type and the semiconductor material is doped for p-conductivity type. An isolation area is provided between the sensor areas. The isolation area is doped for the p-conductivity type and exhibits a factor of two higher dopant concentration than the semiconductor material of the p-conductivity type. The isolation area lies on undetermined potential.