| 摘要 |
A TFT(Thin Film Transistor) array substrate and a method of manufacturing the TFT array substrate are provided to form an etch stopper in a channel region using three masks to reduce the number of masks and the manufacturing cost and protect the channel region from an external environment. A TFT array substrate includes a first conductive pattern(103,105,152,109,111,115,162) formed on a substrate, an active layer(121) formed on a gate insulating layer covering the first conductive pattern to form a channel region, and an etch stopper(123) formed on the channel region of the active layer to protect the channel region from an external environment. The TFT array substrate further includes contact holes(127,129) which penetrate the active layer and the gate insulating layer to expose part of the first conductive pattern, an ohmic contact layer formed in the same pattern as the active layer, and a second conductive pattern(133,135,137,144,164) formed in the same pattern as the ohmic contact layer. |
