| 摘要 |
<p>An exposure mask is provided to avoid a side lobe phenomenon by a destructive interference caused by a phase difference between a contact hole pattern and its adjacent contact hole pattern by forming an exposure mask using a strong phase shift mask having a phase difference of 180 degrees between the contact hole pattern and its adjacent contact hole pattern. A mask pattern(300) is formed on a transparent substrate(305) to define a plurality of island-type light transmitting patterns. The light transmitting patterns include a first light transmitting region(310) and a second light transmitting region(320) separated from the first light transmitting region by a predetermined distance wherein the first and second light transmitting regions have a phase difference of 180 degrees. The first and second light transmitting regions can alternately be formed.</p> |
