| 摘要 |
<p>A method for removing residual titanium on a pad of a semiconductor device is provided to reduce a bonding fail of an ARC(anti-reflective coating) and an aluminum layer by removing residual titanium by a CF4/O2 treatment in an ashing process. A pad composed of titanium and titanium nitride is formed on a semiconductor substrate including an underlying structure. Metal is deposited on the pad, and a coating layer composed of an oxide layer and a nitride layer is formed on the metal. A photoresist pattern is formed on the coating layer. The coating layer on the pad and the titanium nitride are etched to open the metal of the pad by using the photoresist pattern as an etch mask. Residual titanium is eliminated together with the photoresist pattern by a CF4/O2 treatment in an ashing process. In the process for forming the pattern, polyimide is deposited and patterned to harden polyimide at a temperature of 320 °C.</p> |
