| 摘要 |
<p>A method for stabilizing a photoresist strip process of a semiconductor device is provided to reduce a time for HMDS process to prevent a pattern peeling phenomenon by varying etching conditions of the photoresist strip process. Initial etching conditions are set to an etching apparatus, and a pattern peeling test is performed(100). The pattern peeling test is performed by varying an etch gas of the etching conditions(200). The pattern peeling test is performed by varying the etching time(300). The etching conditions are varied according to each etch gas and time(400). An optimized etching condition is searched by combination of test results of each etching condition(500).</p> |
