| 摘要 |
<p>A method for forming a floating gate of a flash memory device is provided to perform the insulation between floating gates effectively by performing a blanket etching to the entire surface above the substrate for forming the floating gate. After depositing an insulation material above a silicon substrate(200) on which an isolation layer is formed, a floating gate insulation layer(204) is formed on the isolation layer by patterning the resultant. A tunnel oxide layer(206) is formed on the surface of the silicon substrate excluding the isolation layer. A polysilicon layer(208) is formed above the silicon substrate on which the tunnel oxide layer is formed. A floating gate is formed by performing a blanket etching to the entire surface of the substrate on which the polysilicon layer is deposited.</p> |
