METHOD FOR FORMING AN INSULATING FILM FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

An apparatus for forming an insulation layer for fabricating a semiconductor device is provided to increase uniformity of an insulation layer by performing a deposition process on a wafer by a single wafer type. A door(111) for opening/closing an entrance is formed in a chamber(110) that includes a support unit(112) for supporting a wafer loaded through the entrance and a supply hole(113) for supplying a process gas. A vapor generator(120) mixes hydrogen gas and oxygen gas and supplies the mixture gas through the supply hole of the chamber. A vacuum supply part(130) supplies vacuum to the chamber. A heating unit(140) heats the inside of the chamber. The vacuum supply part can include a low pressure vacuum pump(131) for firstly supplying vacuum of a low pressure to the chamber and a high pressure vacuum pump(132) for supplying vacuum of a high pressure to the chamber.