LIGHT EMITTING DIODE HAVING BARRIER LAYER OF SUPERLATTICE STRUCTURE

摘要

A light emitting diode having a barrier layer of a superlattice structure is provided to reduce formation of a defect resulted from lattice mismatch between a well layer and the barrier layer. A light emitting diode has an active region(59) formed between a GaN-based N-type compound semiconductor layer(57) and a GaN-based P-type compound semiconductor layer. The active region has a well layer(59a) and a barrier layer(59b) of a supperlattice structure. The well layer is formed of InGaN, and the barrier layer is a supperlattice structure of which InGaN and GaN are alternatively stacked. InGaN of the well layer contains In more than InGaN of the barrier layer.