METHOD FOR PRODUCING GROUP 3-5 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

摘要

Disclosed are a method for producing a group 3-5 nitride semiconductor and a method for manufacturing a light-emitting device. The method for producing a group 3-5 nitride semiconductor comprises the steps (i), (ii) and (iii) described below in this order. The method for manufacturing a light-emitting device comprises the steps (i), (ii), (iii) and (iv) described below in this order. The steps are (i) a step for arranging inorganic particles on a substrate; (ii) a step for growing a semiconductor layer; (iii) a step for separating the semiconductor layer from the substrate by irradiating light between the substrate and the semiconductor layer; and (iv) a step for forming an electrode.