METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, LIGHTSOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting diode which has a significantly high luminous efficiency and can be manufactured at low cost by one epitaxial growth, and also to provide a manufacturing method thereof.

SOLUTION: A method for manufacturing a light-emitting diode comprises the steps of: forming convex portions 12 on one major surface of a substrate 11 such as a sapphire substrate, which are formed of a dielectric substance different from the substrate 11 and have a refractive index of 1.7 to 2.2; growing a nitride-based III-V compound semiconductor layer 15 in a concave portion 13 between the convex portions 12 after the state of being maintained in a triangle cross-sectional shape using the bottom surface of the concave portion as the base; making the nitride-based III-V compound semiconductor layer 15 grow in a lateral direction; and growing the nitride-based III-V compound semiconductor layer including an active layer on the nitride-based III-V compound semiconductor layer 15 to form a light-emitting diode structure. When the substrate 11 is removed, the convex portions 12 are formed by a dielectric substance having a refractive index of 1.0 to 2.3. A light emitting backlight is manufactured using this light emitting diode.

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