| 摘要 |
A method for fabricating a flash memory device, includes: preparing a substrate having an active region and an inactive region; forming a trench in the inactive region; forming a device isolation film in the trench; forming a well in the active region; forming a tunnel oxide film, a first polysilicon layer, an inter-layer dielectric film, a second polysilicon layer, and an oxide film over a surface of the substrate having the well formed therein; and forming a floating gate, a dielectric film, a control gate and a protection film over the active region by patterning the first polysilicon layer, the inter-layer dielectric film, the second polysilicon layer and the oxide film. The method further includes: forming a photoresist pattern over the surface of the substrate to thereby expose the protection film and the inactive region; and removing the exposed tunnel oxide film and the device isolation film over the inactive region using the photoresist pattern. The protection film protects the floating and control gates from becoming damaged during an etching step.
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