| 摘要 |
A nonvolatile memory includes a semiconductor substrate having a body member and a step member formed on the body member, a highly doped first well layer formed on the step member, a control electrode formed on the step member, a first and a second diffusion layers in the substrate, lightly doped second well layers formed on the main surface of the substrate between the first or the second diffusion layer and the first well layer, and a first and a second charge-storage multi-layers sandwiching the step member and the control electrode, each of the first and the second charge-storage multi-layers including a bottom oxide layer, a charge-storage film, a top oxide layer and a floating electrode which are formed in that order.
|
