CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE
摘要
<p>The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01 ~ 0.8 weight% with respect to an entire weight of the polishing composition.</p>
申请公布号
WO2008078909(A1)
申请公布日期
2008.07.03
申请号
WO2007KR06706
申请日期
2007.12.20
申请人
TECHNO SEMICHEM CO., LTD.;KIM, SEOK-JU;PARK, HYU-BUM;JEONG, EUN IL
