| 摘要 |
A substrate treatment apparatus is provided to control the quantity of exhausted gas through an exhaust controller while continuously measuring the exhaust pressure of an exhaust pump and the temperature of a process chamber to adjust the quantity of exhausted gas appropriately even through a process condition is varied to thereby improve process stability. A substrate treatment apparatus includes a process chamber(100), a gas pipe(122), an exhaust controller(123), an exhaust pump(126), and a controller(128). The gas pipe is connected to the process chamber. The exhaust controller is attached to the gas pipe and controls the quantity of gas exhausted from the process chamber. The exhaust pump is connected with the exhaust controller and exhausts the gas under an exhaust pressure lower than the inner pressure of the process chamber. The controller measures the exhaust pressure and the inner temperature of the process chamber to control the exhaust quantity of the exhaust controller. |
