METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to remove particles remaining after a CMP(Chemical Mechanical Polishing) process by a nitride layer hard mask and a poly silicon layer hard mask on an upper portion of a bit line. Plural bit lines(220) are formed on a semiconductor substrate(200). A nitride layer hard mask(216) and a poly silicon layer hard mask are laminated on an upper portion of the bit lines. A dielectric is formed on the semiconductor substrate where the bit line is formed to cover the bit lines. A CMP process is performed on the dielectric to expose the poly silicon layer hard mask of the bit line. The dielectric is etched to form a hole. A conductive layer(214) for gap-filling the hole is deposited to form a storage node contact plug(240). After the bit lines are formed and before the dielectric is formed to cover the bit lines, a nitride layer(222) for a spacer is formed on both sidewalls of the bit line.