| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the leaning of a gate pattern by forming the gate pattern to control the etch conditions of a gate metal film and a barrier metal film, thereby obtaining a vertical profile. A gate polysilicon layer, a barrier metal film, and a gate metal film are sequentially formed on a substrate(300). A gate metal pattern(340a) is formed by etching the gate metal film using a gate hard mask pattern as a mask and a first etch condition. A barrier metal pattern(330a) is formed by etching the barrier metal film using the gate metal pattern as a mask and a second etch condition added to He gas in the first etch condition. Then, a gate pattern(360) is formed by etching the gate polysilicon layer.
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