发明名称 LITHOGRAPHY EQUIPMENT AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method by which a portion with no resist around an outside region of a substrate is provided in the shape of a continuous ring. <P>SOLUTION: Ultraviolet rays radiant port UVS irradiates a region of a resist 1 already exposed by i-line ultraviolet radiation, and also a portion of a resist R surrounding the region 1 which was irradiated before. The resist R is irradiated by deep ultraviolet radiant rays, by which a layer 3 is formed. This layer 3 is a polymerized layer formed by cross-linking between other processes. An ICA in the resist R forms ester with a Novolak structure. A remained PAC polymer forms bonding with the Novolak structure (for example, a vulcanization process is caused). The polymerized layer 3 is not dissolved in MIB developer or MIF developer. Moreover, the polymerized layer 3 becomes insensitive to ultraviolet rays. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008153637(A) 申请公布日期 2008.07.03
申请号 JP20070300096 申请日期 2007.11.20
申请人 ASML NETHERLANDS BV 发明人 GUI CHENG-QUN;PELLENS RUDY JAN MARIA
分类号 H01L21/027 主分类号 H01L21/027
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