| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique by which a plurality of impurity implanted regions having different impurity concentrations can be formed on a semiconductor substrate without carrying out a photolithography process a plurality of times. <P>SOLUTION: The method for forming a plurality of impurity implanted regions having different impurity concentrations on the semiconductor substrate includes a first resist layer forming process of forming a positive pre-exposure first resist layer on the surface of the semiconductor layer, the first resist layer being exposed to light at a first light quantity, a second resist layer forming process of forming a positive pre-exposure second resist layer on the surface of the first resist layer, the second resist layer being exposed to light at a second light quantity less than the first light quantity, a light-exposure process of emitting light having a light quantity larger than the first light quantity on a first prescribed range on the first and second resist layers and emitting light having a light quantity less than the first light quantity and equal to or more than the second light quantity on a second prescribed range on the first and second resist layers, a developing process of developing the first and second layers having exposed to light, and an ion implanting process of projecting an ionized impurity onto the surface of the semiconductor substrate having undergone the developing process. <P>COPYRIGHT: (C)2008,JPO&INPIT |
