| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein it is difficult to produce a semiconductor laser element which has an optical waveguide structure with proper refractive index distribution and which provides high efficiency and high production yield, in a nitride compound semiconductor laser device. SOLUTION: In the semiconductor laser element which has a substrate, a lower clad layer, an active layer, and an upper clad layer, in this order, the upper clad layer is a ridge stripe shape extending in the direction of a resonator, and a p-type electrode is formed in the upper surface of the ridge stripe. COPYRIGHT: (C)2008,JPO&INPIT
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