| 摘要 |
PROBLEM TO BE SOLVED: To reduce the deterioration of a gate of a power semiconductor element in the inspection of a protection circuit. SOLUTION: A power semiconductor device includes a protection circuit 20 for protecting an IGBT 10 by suppressing the voltage between a gate terminal G and a current-sensing terminal S of the IGBT 10 at the time when an abnormal voltage is input to the gate terminal G from the outside. The protection circuit 20 comprises zener diodes 21 and 22 connected in series. There is provided a wiring 40 for electrically connecting a connection point P1 between the zener diodes 21 and 22 of the protection circuit 20 and a terminal electrode T for dividing to inspect the protection circuit. COPYRIGHT: (C)2008,JPO&INPIT
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