发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of adjusting the capacitance of a capacitor after a wafer stage is completed while securing reliability and quality of the capacitor. SOLUTION: The semiconductor device has a plurality of capacitors for capacitance adjustment on the same semiconductor substrate while the capacitors for capacitance adjustment are coated with passivation films. The plurality of capacitors for capacitance adjustment have electrodes in the same layers coupled by in-layer connection wirings respectively to constitute one capacitor block, where an electrode in at least one layer among the electrodes in the respective layers coupled by the in-layer connection wirings and the in-layer connection wiring connecting the electrodes are constituted as a thin film resistor made of the same conductive material, and the thin-film resistor is broken at a part corresponding to the in-layer connection wiring by selectively irradiating the part with light, thereby adjusting the capacitance of the capacitor block. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008153473(A) 申请公布日期 2008.07.03
申请号 JP20060340544 申请日期 2006.12.18
申请人 DENSO CORP 发明人 KARESUE MASAKAZU;NAKANO TAKASHI
分类号 H01L21/822;H01L21/3205;H01L23/52;H01L27/04 主分类号 H01L21/822
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