| 摘要 |
PROBLEM TO BE SOLVED: To remove an insoluble material generated in mixing bake and also prevent a stain failure generated in a resist pattern during a shrink process of resist pattern. SOLUTION: A thin-film pattern forming process includes the steps of forming a resist pattern 12 with photolithography, forming a resist film 13 for creation of mixing on the resist pattern 12 by coating thereof, forming a mixing layer 15 by heat treatment, developing the mixing layer 15 with a reduced alkali developer 17 including tetra-methyl-ammonium-hydroxide of 0.05 to 0.37 wt.%, and rinsing the mixing layer with pure water in order to form the resist pattern 12 shrunk by the mixing layer 15. In the developing step, the insoluble material 16 formed within the resist film 13 for creation of mixing is removed in the heat treatment step. COPYRIGHT: (C)2008,JPO&INPIT
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